Preparation of bimetallic catalysts Ni-Co and Ni-Fe supported on activated carbon for methane decomposition

Synthesis of MWCNTs Using Monometallic and Bimetallic Combinations of Fe, Co and Ni Catalysts Supported on Nanometric SiC via TCVD

Nanometric Carbid Silicon (SiC) supported monometallic and bimetallic catalysts containing Fe, Co, Ni transition metals were prepared by wet impregnation method. Multiwall carbon nanotubes (MWCNTs) were synthesized over the prepared catalysts from catalytic decomposition of acetylene at 850°C by thermal chemical vapor deposition (TCVD) technique. The synthesized nanomaterials (catalysts and CNT...

synthesis of mwcnts using monometallic and bimetallic combinations of fe, co and ni catalysts supported on nanometric sic via tcvd

nanometric carbid silicon (sic) supported monometallic and bimetallic catalysts containing fe, co, ni transition metals were prepared by wet impregnation method. multiwall carbon nanotubes (mwcnts) were synthesized over the prepared catalysts from catalytic decomposition of acetylene at 850°c by thermal chemical vapor deposition (tcvd) technique. the synthesized nanomaterials (catalysts and cnt...

CO x Free Hydrogen Production by Catalytic Decomposition of Methane Over Porous Ni/Al2O3 Catalysts

Role of growth temperature in CVD synthesis of Carbon nanotubes from Ni-Co bimetallic catalysts

The effect of temperature variation on the growth of Carbon Nanotubes (CNTs) using Thermal Chemical Vapor Deposition (TCVD) is presented. Nickel and Cobalt (Ni-Co) thin films on Silicon (Si) substrates were used as catalysts in TCVD technique. Acetylene gas was used in CNTs growth process at the controlled temperature ranges from 850-1000 ̊ C. Catalysts and CNTs characterization was carried out ...

Role of growth temperature in CVD synthesis of Carbon nanotubes from Ni-Co bimetallic catalysts

The effect of temperature variation on the growth of Carbon Nanotubes (CNTs) using Thermal Chemical Vapor Deposition (TCVD) is presented. Nickel and Cobalt (Ni-Co) thin films on Silicon (Si) substrates were used as catalysts in TCVD technique. Acetylene gas was used in CNTs growth process at the controlled temperature ranges from 850-1000 ̊ C. Catalysts and CNTs characterization was carried out ...